A complete solid solution between GeO2 and SiO2 with the ?-quartz structure: Additional X-ray diffraction data from Ge1Si O2 flux-grown crystals
نویسندگان
چکیده
Millimeter-sized crystals of formula Ge1?xSixO2, i.e. GeO2 materials partially substituted by SiO2, were obtained for the first time both in middle and Si-rich parts GeO2–SiO2 composition domain (0.5 ?? ?x ?0.93) spontaneous nucleation using high-temperature flux method. The X-ray crystal diffraction (XRD) data at room temperature confirm non-centrosymmetric ?-quartz-type structure low level defects these as-grown materials. silicon content Ge1?xSixO2 was determined interpolation from inter-tetrahedral bridging angle. complete mutual solubility is confirmed between ?-SiO2 ?-GeO2. deviation regularity TO4 tetrahedra (T ?= ?Si, Ge) decreases linearly when Ge gradually replaced Si.
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ژورنال
عنوان ژورنال: Journal of Solid State Chemistry
سال: 2023
ISSN: ['0022-4596', '1095-726X']
DOI: https://doi.org/10.1016/j.jssc.2022.123658